SOI SUBSTRATES AND DEVICES ON SOI SUBSTRATES HAVING A SILICON NITRIDE DIFFUSION INHIBITION LAYER AND METHODS FOR FABRICATING

摘要

Semiconductor-on-insulator substrates and methods for fabricating semiconductor-on-insulator substrates are provided. One exemplary method comprises providing a first silicon-comprising substrate, providing a second silicon-comprising substrate, forming a first silicon nitride layer overlying the second silicon-comprising substrate, and coupling the first silicon-comprising substrate to the second silicon-comprising substrate such that the first silicon nitride layer is interposed between the two substrates.