THE METHOD OF MANUFACTURING A FLASH MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a flash memory device is provided to prevent the formation of an interfacial layer with a wide band-gap by forming a buffer film composed of Al2O3 between a tunnel dielectric film with a stacked structure and a high-k dielectric film. CONSTITUTION: A tunnel dielectric film(102) with a multilayer structure of a first dielectric film(102a), a buffer film(102b) and a high-k dielectric film(102c) is formed on a semiconductor substrate(100). A second dielectric film(104), a blocking film(106) and a conductive film(108) is formed on the tunnel dielectric film. A gate(112) is formed by etching the conductive film, the blocking film, the second dielectric film and the turner dielectric film. A Thermal process is performed after formation of the first dielectric film. The buffer layer is made of Al2O3. The first dielectric film is formed by a thermal oxidation process or a radical oxidation process.