METHOD OF FORMING REFRACTORY METAL CARBIDE OHMIC CONTACT LAYER ON SIC USING CARBONIZATION PROCESS AND THE DEVICE THEREOF

摘要

PURPOSE: A method for forming a refractory metal carbide ohmic-contact layer on SIC and a power semiconductor device using the same are provided to form a refractory metal carbide layer by depositing a refractory metal carbide layer on a carbonized layer at the low temperature and performing a heat treatment. CONSTITUTION: A carbonized layer(111) is formed by applying a photoresistor on the upper side of a silicon carbide substrate(100) and performing a heat treatment. A refractory metal layer(120) is selectively formed on the part of the carbonized layer, in which a formation for an ohmic contact is required. A refractory metal carbide layer is formed on the carbonized layer by reacting the refractory metal layer and the carbon of the carbonized layer. Residues of the carbonized layer are removed after formation of the refractory metal carbide layer. The heat treatment is performed for 10 to 30 minutes at 900°C or more.