| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent bridge between a word line and a buried bit-line by implanting fluorine ion in the part of a semiconductor substrate in which the buried bit-line is adjoined. CONSTITUTION: A plurality of pillar type active patterns(P) are formed on the semiconductor substrate(100). An ion implantation region(120) is formed in the surface of the semiconductor substrate between pillar type active patterns. A gate(G) including a gate insulation layer(132) and a gate conductive layer(134) arranged on the gate insulation layer is formed on the side wall of the pillar type active patterns. The thickness of the part of the gate adjoining the ion-implantation region is relatively thicker than the thickness of other part. A bit-line is formed in the substrate. An insulation layer(150) including the side wall insulation layer(142) is formed in the ion-implantation region and in the part of the semiconductor substrate under the ion-implantation region. The thickness of the part of the side wall insulation layer adjoining the ion-implantation region is relatively thicker than the thickness of the other part.
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