| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve a yield by cleaning a contact hole at the relatively low temperature with a standard cleaning process and removing a defect with a round shape. CONSTITUTION: An insulation film(70A) is formed on the upper side of a substructure formed on a semiconductor substrate(40). A protective film(72A) is formed on the upper side of the insulation film. A contact hole(80A) for exposing the part forming a contact on the substructure is formed by etching the insulation film and the protective film. The contact hole is cleaned at a temperature of 55 to 70°C or less with a mixture. The contact is formed by filling the metal material in the contact hole. The metal wiring connected to the contact is formed.
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