| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to alleviate a compressive stress between a semiconductor substrate and a trench isolation layer by forming a liner oxide layer on the inner surface of a trench for device isolation and performing an annealing process. CONSTITUTION: A first pad oxide layer(302) is formed on a semiconductor substrate(300) by a thermal oxidation process. A trench for device isolation(308) is formed by etching the semiconductor substrate. A liner oxide layer is formed on the inner surface of the trench for device isolation. A nitride-based oxide layer(310) is formed by an annealing process using nitride-based gas. The insulation material is embedded inside the trench in which the nitride-based oxide layer is formed. The top of the embedded insulation material is planarized. The liner oxide layer is formed by an oxidation process.
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