| 摘要 |
PROBLEM TO BE SOLVED: To provide sufficient gain at high temperature, in a semiconductor device using a quantum dot. SOLUTION: This semiconductor device includes a composite quantum dot, a plurality of wetting layers, a plurality of side barrier layers, and light guide layers (SCH layers) sandwiching the composite quantum dot. The ground level of a conduction band of a band structure of a laminate part with the wetting layers and the side barrier layers alternately laminated is set equal to or higher than the energy level of a conduction band of the light guide layer; or the ground level of a valence band of a band structure of the laminate part is set equal to or higher than the energy level of a valence band of the light guide layer. COPYRIGHT: (C)2010,JPO&INPIT
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