| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an imaging apparatus with further enhanced sensitivity. Ž<P>SOLUTION: A CMOS image sensor (imaging apparatus) includes a PD section 11 which generates electrons, an electron multiplication section 12a for multiplying the electrons generated by the PD section 11, a first light shield section 5a formed nearby a short side 11b extending in a transfer direction (X direction) of the electrons out of an outer edge portion of the PD section 11, and a PD global reset intersection 5 provided in the PD section 11 on the opposite side from the side where the electron multiplication section 12a is disposed. Further, the light shield section 5a is formed integrally with the PD global reset interconnection 5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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