发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MAKING THE SAME |
摘要 |
A non-volatile semiconductor memory device according to the present invention includes a substrate; a first word-line provided above the substrate surface, the first word-line having a plate shape in an area where a memory cell is formed; a second word-line provided above the first word-line surface, the second word-line having a plate shape; a plurality of metal wirings connecting the first and second word-lines with a driver circuit; and a plurality of contacts connecting the first and second word-lines with the metal wirings. The contact of the first word-line is formed in a first word-line contact area. The contact of the second word-line is formed in a second word-line contact area. The first word-line contact area is provided on a surface of the first word-line that is drawn to the second word-line contact area.
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申请公布号 |
US2010039865(A1) |
申请公布日期 |
2010.02.18 |
申请号 |
US20080521997 |
申请日期 |
2008.01.31 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KIDOH MASARU;TANAKA HIROYASU;KITO MASARU;KATSUMATA RYOTA;AOCHI HIDEAKI;SATO MITSURU |
分类号 |
G11C16/06;H01L21/4763;H01L29/792 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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