| 摘要 |
A solid-state image sensor includes: a plurality of pixels, each having a photodiode, a floating diffusion, a transfer transistor, a reset transistor, and an amplifying transistor; vertical signal lines 31 for receiving signals from the plurality of pixels; sampling capacitors 62; circuits 78 for comparing a voltage on a corresponding one of the vertical signal lines 31 with a reference voltage to determine whether the voltage on the corresponding vertical signal line 31 is higher or lower than the reference voltage; and clip circuits 79 for outputting a clip voltage Vclip to a corresponding one of the sampling capacitors 62 based on the output of a corresponding one of the circuits 78. A voltage on each vertical signal line in the state where the signal accumulated in a corresponding photodiode has been transferred to a corresponding floating diffusion, can be used as a comparison voltage of each column.
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