发明名称 Drive circuit and inverter for voltage driving type semiconductor device
摘要 <p>A drive circuit (1) for driving a semiconductor element (M1) is equipped with: a first switch (SW1) connected to a positive side of a DC power supply (Vdd); a second switch (SW2) connected to the other terminal of the first switch (SW1) and to a negative side of the DC power supply (Vdd); a third switch (SW3) connected to the positive side of the DC power supply (Vdd); a fourth switch (SW4) connected to the other terminal of the third switch (SW3); a fifth switch (SW5) connected to the other terminal of the fourth switch (SW4) and to the negative side of the DC power supply; and a capacitor (Cin) connected to the other terminal of the first switch (SW1) and to the other terminal of the fourth switch (SW4). In the drive circuit (1), a gate of the semiconductor element (M1) is connected to the other terminal of said third switch (SW3); and a source of the semiconductor element (M1) is connected to the negative side of the DC power supply (Vdd). </p>
申请公布号 EP2015439(A3) 申请公布日期 2010.02.17
申请号 EP20080012240 申请日期 2008.07.07
申请人 HITACHI LTD. 发明人 HASHIMOTO, TAKAYUKI;HIRAO, TAKASHI;SHIRAISHI, MASAKI
分类号 H02M7/48;H02M3/07 主分类号 H02M7/48
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