发明名称 METHOD FOR CRYSTALLIZING AN AMORPHOUS THIN FILM AND WIRING STRUCTURE FOR PERFORMING THE SAME
摘要 <p>PURPOSE: A method for crystallizing an amorphous thin film and a wiring structure for performing the same is provided to offer an uniform electric current density flowing in all amorphous thin films arranged in the form of the matrix by improving the wiring structure for the crystallization of the FALC(Field Aided Lateral Crystallization) process. CONSTITUTION: A basic unit(600) can extend from a first unit arranged in the matrix type of 2 x 2 to a n-th unit arranged in the matrix type of 2 n(N is the natural number more than 2). A basic unit comprises a cell(610) including the amorphous thin film arranged in the matrix type of 2 x 2. The basic unit comprises a (+) cell electrode(620) connecting one side of the cell arranged in each heat of 2 of 2 and a (-) cell electrode(630) connecting the other side of the cell arranged in each heat of 2 of 2. Also, the basic unit includes a (+) connecting electrode(640) connecting two (+) cell electrodes and a (-) connecting electrode(650) connecting two (-) cell electrodes.</p>
申请公布号 KR20100018131(A) 申请公布日期 2010.02.17
申请号 KR20080076755 申请日期 2008.08.06
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 CHOI, DUCK KYUN;KIM, YOUNG BAE;YOU, JUNG SUN
分类号 H01L29/786 主分类号 H01L29/786
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