发明名称 |
METHOD FOR CRYSTALLIZING AN AMORPHOUS THIN FILM AND WIRING STRUCTURE FOR PERFORMING THE SAME |
摘要 |
PURPOSE: A method for crystallizing an amorphous thin film and a wiring structure for performing the same is provided to allow the same electric current density to flow in each amorphous thin film by crystallizing the amorphous thin film in a matrix type using the FALC(Field Aided Lateral Crystallization) process. CONSTITUTION: A first unit in which two basic units(600) are arranged up and down for the can extend to a n-th(N is the natural number more than 2) unit in which basic units of n are arranged up and down. The basic unit comprises a cell(610) including the amorphous thin film side by side arranged to the upward and downward of 2. Also, the basic unit includes a cell electrode(630) connecting one side of the cell of 2 and a cell electrode(640) connecting the other side of the cell of 2 (-). The first unit comprises a first (+) common electrode connecting a (+) cell electrode of the basic unit of 2, and a first (-) common electrode connecting a (-) cell electrode of 2 basic units.
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申请公布号 |
KR20100018135(A) |
申请公布日期 |
2010.02.17 |
申请号 |
KR20080076761 |
申请日期 |
2008.08.06 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
CHOI, DUCK KYUN;KIM, YOUNG BAE;YOU, JUNG SUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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