发明名称 METHOD FOR CRYSTALLIZING AN AMORPHOUS THIN FILM AND WIRING STRUCTURE FOR PERFORMING THE SAME
摘要 PURPOSE: A method for crystallizing an amorphous thin film and a wiring structure for performing the same is provided to allow the same electric current density to flow in each amorphous thin film by crystallizing the amorphous thin film in a matrix type using the FALC(Field Aided Lateral Crystallization) process. CONSTITUTION: A first unit in which two basic units(600) are arranged up and down for the can extend to a n-th(N is the natural number more than 2) unit in which basic units of n are arranged up and down. The basic unit comprises a cell(610) including the amorphous thin film side by side arranged to the upward and downward of 2. Also, the basic unit includes a cell electrode(630) connecting one side of the cell of 2 and a cell electrode(640) connecting the other side of the cell of 2 (-). The first unit comprises a first (+) common electrode connecting a (+) cell electrode of the basic unit of 2, and a first (-) common electrode connecting a (-) cell electrode of 2 basic units.
申请公布号 KR20100018135(A) 申请公布日期 2010.02.17
申请号 KR20080076761 申请日期 2008.08.06
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 CHOI, DUCK KYUN;KIM, YOUNG BAE;YOU, JUNG SUN
分类号 H01L21/20 主分类号 H01L21/20
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