| 摘要 |
PURPOSE: A plasma chemical vapor deposition apparatus is provided to form a deposition film of a uniform thickness on a wafer by uniformly focusing the reaction gas and plasma on a Central part and an edge portion of a wafer. CONSTITUTION: An electrostatic chuck(11) included within a processing chamber(10) settles a wafer. A power supply unit applies the power in the electrostatic chuck. A gas injector(20) is installed on one side of the processing chamber in order to inject the reaction gas to the one side of the electrostatic chuck, and is installed to be rotatable by delivered the power from a motor. A gas supply part(25) supplies the reaction gas to the gas injector. A radio frequency shield(30) is installed on both sides of is the electrostatic chuck to be facing each other and to be pivoting in the opposite direction to form the RF(Radio Frequency) continuously. A RF power supply unit(35) applies the power to the radio frequency shield.
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