发明名称 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition used in fine pattern formation in semiconductor manufacture and more excellent in exposure latitude, LWR and pattern collapse property than the conventional composition. <P>SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin that exhibits an increased solubility in an alkali developer when acted on by an acid, and (B) at least two types of sulfonic acid generators that generate a sulfonic acid when exposed to actinic rays or radiation, wherein the two types of sulfonic acid generators (B) consist of sulfonic acid generators (B1) and (B2) satisfying the following requirements, namely the sulfonic acid generator (B1) generates an acid composed of 9-20 elements with an acid strength (pKa) satisfying the relationship pKa<-3.50, and the sulfonic acid generator (B2) generates an acid composed of &ge;17 elements with an acid strength (pKa) satisfying the relationship -2.00>pKa&ge;-3.50, provided that no hydrogen atom is included in the number of elements of the generated acids. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010039476(A) 申请公布日期 2010.02.18
申请号 JP20090146250 申请日期 2009.06.19
申请人 FUJIFILM CORP 发明人 KATO TAKAYUKI;SHIRAKAWA MICHIHIRO;TAKAHASHI AKIRA
分类号 G03F7/039;C07C309/06;C07C309/10;C07C309/17;C07C381/12;G03F7/004;H01L21/027 主分类号 G03F7/039
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