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发明名称
CMP slurry composition for the phase change memory materials and polishing method using the same
摘要
申请公布号
KR100943020(B1)
申请公布日期
2010.02.17
申请号
KR20070065874
申请日期
2007.06.29
申请人
发明人
分类号
C09K3/14
主分类号
C09K3/14
代理机构
代理人
主权项
地址
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