| 摘要 |
The invention relates to an optoelectronic component, comprising a carrier, a metal mirror layer disposed on the carrier, a first passivation layer disposed on a region of the metal mirror layer, a semiconductor layer disposed on the first passivation layer for generating an active zone during electric operation, a second passivation layer comprising two regions, wherein the first region is disposed on the top side of the semiconductor layer and the second region is disposed on the metal mirror layer, said second region being free of the semiconductor layer, wherein the first region and the second region of the second passivation layer are separated from each other by a region that surrounds the first passivation layer and is free of the second passivation layer. |
