TRANSISTOR OF IMAGE SENSOR, METHOD OF MANUFACTURING THEREOF

摘要

PURPOSE: A transistor of an image sensor and a method for manufacturing the same are provided to solve an isolation problem between different conductive wells by forming a BJT(Bipolar Junction Transistor) used for a CMOS image sensor without using the wells. CONSTITUTION: A second conductive well is formed on the first conductive transistor region of a substrate and a first conductive well is formed on the second conductive transistor region of the substrate. A gate pattern(200a) of the first conductive transistor is formed on the second conductive well of the first conductive transistor region. A gate pattern(200b) of the second conductive transistor is formed on the first conductive well of the second conductive transistor region. A lamination film(200c) with an identical laminated structure to the gate pattern is formed on a trench type insulation layer of the junction transistor region. A bipolar junction(300) is formed on the lamination film. A contact(440) connected to each junction of the bipolar junction is formed.