发明名称 |
Reading voltage generator for a non-volatile EEPROM memory cell matrix of a semiconductor device and corresponding manufacturing process |
摘要 |
A reference voltage generator for a matrix of non-volatile memory cells of the EEPROM type, comprises at least one array enabled by an access transistor. The array comprises at least one reference cell associated with a relative select transistor, the transistors and the cell being realized on a semiconductor substrate and having active regions delimited by suitable field oxide regions and covered by a tunnel oxide layer and comprising at least one floating gate realized by a first polysilicon layer and covered by a dielectric layer and by a second polysilicon layer. Advantageously, the floating gate of the reference cells is contacted by a first contact terminal connected to a discharge transistor for the periodical discharge of possibly present charges. A process manufactures such a voltage generator.
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申请公布号 |
US7663927(B2) |
申请公布日期 |
2010.02.16 |
申请号 |
US20070941650 |
申请日期 |
2007.11.16 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PALUMBO ELISABETTA;ZULIANI PAOLA;ANNUNZIATA ROBERTO;ZOMPI DANIELE |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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