| 摘要 |
A method of producing a semiconductor element in a substrate includes forming a plurality of micro-cavities and carbide precipitates in the substrate, creating an amorphization of the substrate to form crystallographic defects and a doping of the substrate with doping atoms, annealing the substrate such that at least a part of the crystallographic defects are eliminated using the micro-cavities and the carbide precipitates, and wherein the semiconductor element is formed using the doping atoms.
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