| 摘要 |
PURPOSE: A method of forming a memory device is provided to easily remove a protective film thickly formed between floating gates by implementing a contact hole etching process for removing a dielectric film on an area on which a selecting transistor will be formed after filling up the concavo-convex of a buffer layer formed on a surface of the protective film. CONSTITUTION: An active region is formed with a tunnel dielectric layer(104) and a first conductive layer(106). At an element dividing region, a dielectric film(110) is formed on a semiconductor substrate(102) on which an element dividing film is formed. A passivation layer(112) is formed on the dielectric film. The buffer layer is formed on the protective film in order to fill up the concavo-convex formed on the surface of the protective film. The buffer layer on the area on which the selecting transistor will be formed and the contact hole for removing the protective film and the dielectric film are formed. A second conductive film(118) for the control gate is formed on the protective film and the first conductive film including the contact hole.
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