发明名称 Flash memory access apparatus and method
摘要 A flash memory access apparatus and method improves the overall performance of a flash memory system by minimizing the deterioration of performance of a flash memory due to repeated write operations through a minimized process of a write operation and the process of a recovery operation in consideration thereof and by allowing a stable recovery even though an error occurs. The flash memory access apparatus comprises a flash memory with regions divided on the basis of a unit that consists of predetermined blocks; and a flash memory controller. When a write operation is requested for a specific logical block number of the flash memory, the flash memory controller writes data and meta-information in a physical block corresponding to a logical block with the logical block number in the absence of a previous write operation for the logical block, but performs a write operation for writing the data and the meta-information allocated to the logical block in a new physical block without changing flash memory state information written in a previous physical block corresponding to the logical block in case of the presence of the previous write operation.
申请公布号 US7664906(B2) 申请公布日期 2010.02.16
申请号 US20040802010 申请日期 2004.03.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUNG TAE-SUN;KIM BUM-SOO;KWON YONG-SEOK
分类号 G06F12/02;G06F12/16;G06F12/00;G11C16/10 主分类号 G06F12/02
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