发明名称 |
Flash memory access apparatus and method |
摘要 |
A flash memory access apparatus and method improves the overall performance of a flash memory system by minimizing the deterioration of performance of a flash memory due to repeated write operations through a minimized process of a write operation and the process of a recovery operation in consideration thereof and by allowing a stable recovery even though an error occurs. The flash memory access apparatus comprises a flash memory with regions divided on the basis of a unit that consists of predetermined blocks; and a flash memory controller. When a write operation is requested for a specific logical block number of the flash memory, the flash memory controller writes data and meta-information in a physical block corresponding to a logical block with the logical block number in the absence of a previous write operation for the logical block, but performs a write operation for writing the data and the meta-information allocated to the logical block in a new physical block without changing flash memory state information written in a previous physical block corresponding to the logical block in case of the presence of the previous write operation.
|
申请公布号 |
US7664906(B2) |
申请公布日期 |
2010.02.16 |
申请号 |
US20040802010 |
申请日期 |
2004.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG TAE-SUN;KIM BUM-SOO;KWON YONG-SEOK |
分类号 |
G06F12/02;G06F12/16;G06F12/00;G11C16/10 |
主分类号 |
G06F12/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|