发明名称 Semiconductor device having transfer gate between pre-buffer and main buffer
摘要 A semiconductor device includes a pre-buffer for transferring a data signal on the basis of a first power supply voltage, a main buffer for amplifying and outputting the data signal transferred by the pre-buffer on the basis of a second power supply voltage different from the first power supply voltage, a switch unit for controlling a conductive state between the pre-buffer and the main buffer on the basis of a switch control signal, and a control circuit for generating the switch control signal for controlling the pre-buffer to set an output level of the pre-buffer to ground potential in accordance with transition of logical level of the switch control signal.
申请公布号 US7663407(B2) 申请公布日期 2010.02.16
申请号 US20080213780 申请日期 2008.06.24
申请人 NEC ELECTRONICS CORPORATION 发明人 NISHITANI TOMOYA;KAWAKAMI KENICHI
分类号 H03K19/094 主分类号 H03K19/094
代理机构 代理人
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