发明名称 |
Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
摘要 |
Electronic apparatus and methods of forming the electronic apparatus include a conductive layer having a layer of ruthenium in contact with a lanthanide oxide dielectric layer for use in a variety of electronic systems. The lanthanide oxide dielectric layer and the layer of ruthenium may be structured as one or more monolayers. The lanthanide oxide dielectric layer and the layer of ruthenium may be formed by atomic layer deposition.
|
申请公布号 |
US7662729(B2) |
申请公布日期 |
2010.02.16 |
申请号 |
US20050117125 |
申请日期 |
2005.04.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|