发明名称 Integrated circuit device having a gas-phase deposited insulation layer
摘要 An integrated circuit device includes a semiconductor device having an integrated circuit. A gas-phase deposited insulation layer is disposed on the semiconductor device, and a conducting line is disposed over the gas-phase deposited insulation layer.
申请公布号 US7662726(B2) 申请公布日期 2010.02.16
申请号 US20070854877 申请日期 2007.09.13
申请人 INFINEON TECHNOLOGIES AG 发明人 MAHLER JOACHIM;EWE HENRIK;MENGEL MANFRED
分类号 H01L21/31;H01L21/16 主分类号 H01L21/31
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