发明名称 Semiconductor integrated circuit device
摘要 A semiconductor integrated circuit device provided with a plurality of power supply wire layers including a first potential power supply wire and a second potential power supply wire formed in different layers. At least one capacitor contact wire extends from one of the first and second potential power supply wires toward the other one of the first and second potential power supply wires so as to form a capacitor between each capacitor contact wire and its surrounding wires.
申请公布号 US7663175(B2) 申请公布日期 2010.02.16
申请号 US20060442152 申请日期 2006.05.30
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 KOMURA KAZUFUMI;NAKAMURA TAKAYOSHI;FUJIMURA KEIICHI;HIROSE MASAHITO;NAKASHIMA KEIGO;NAGATO MASAKI
分类号 H01L27/108;H01L29/94 主分类号 H01L27/108
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