| 摘要 |
A semiconductor memory device includes: a memory section; and a control section that controls writing and reading of data with respect to the memory section, wherein the memory section includes a first memory region formed from nonvolatile memory cells, each of the memory cells storing binary data corresponding to a first polarization state and a second polarization state; and the control section controls, for all of the memory cells included in the first memory region, such that, before writing data to each of the memory cells based on new data externally inputted, the memory cell is polarized in the first polarization state, and then the memory cell is further polarized in the second polarization state.
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