发明名称 Nonvolatile semiconductor memory device
摘要 A nonvolatile semiconductor memory device capable of reading and verifying a negative threshold cell by biasing a source line and a well line to a positive voltage. The nonvolatile semiconductor memory device includes a precharge circuit which precharges a bit line to the same voltage as that of the source line in reading and verifying the negative threshold cell.
申请公布号 US7663932(B2) 申请公布日期 2010.02.16
申请号 US20070965154 申请日期 2007.12.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HAMADA MAKOTO;MAEJIMA HIROSHI
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
主权项
地址