METHOD FOR MANUFACTURING SEMICONDUCTOR CRYSTAL OF NITRIDE OF ELEMENT BELONGING TO GROUP-III, SEMICONDUCTOR SUBSTRATE FORMED OF NITRIDE OF ELEMENT BELONGING TO GROUP-III, AND SEMICONDUCTOR LIGHT EMISSION DEVICE

摘要

A method for manufacturing a semiconductor crystal of a nitride of an element belonging to Group-III includes a growth step which prepares a seed crystal having a non-polar surface and causes a semiconductor of a nitride of an element belonging to Group-III to grow from the non-polar surface in a gas phase. The growth step causes the semiconductor of the nitride of the element belonging to Group-III to grow so as to extend in the +C-axis direction of the seed crystal. Thus, it is possible to obtain a semiconductor crystal of a nitride of an element belonging to Group-III-V having a non-polar surface of a high quality and a large area.