发明名称 |
METHODS OF FABRICATING SILICON CARBIDE POWER DEVICES BY CONTROLLED ANNEALING |
摘要 |
Silicon carbide power devices are fabricated by masking the surface of a silicon carbide substrate to define an opening at the substrate, implanting p-type dopants into the silicon carbide substrate through the opening at implant energy and dosage that form a deep p-type implant, and implanting n-type dopants into the silicon carbide substrate through the opening at implant energy and dosage that form a shallow n-type implant relative to the deep p-type implant. The deep p-type implant and the shallow n-rype implant are annealed at less than 1650 °C, but preferably more than about 1500°. The annealing preferably takes place for between about five minutes and about thirty minutes. Ramp-up time from room temperature to the anneal temperature is also controlled to be less than about one hundred minutes but more than about thirty minutes. Ramp-down time after annealing is also controlled by decreasing the temperature from the annealing temperature to below about 1500 °C in less than about two minutes. By controlling the ramp-up time, the annealing time and/or temperature and/or the ramp-down time, high performance silicon carbide power devices may be fabricated. |
申请公布号 |
CA2334339(C) |
申请公布日期 |
2010.02.16 |
申请号 |
CA19992334339 |
申请日期 |
1999.06.07 |
申请人 |
CREE, INC. |
发明人 |
SUVOROV, ALEXANDER V.;PALMOUR, JOHN W.;SINGH, RANBIR |
分类号 |
H01L29/00;H01L21/04;H01L21/265;H01L21/336;H01L29/12;H01L29/24;H01L29/78 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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