Method for forming gate dielectric layer

摘要

Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200° C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.