| 摘要 |
A solid-state imaging device is provided and has a plurality of pixel parts including three photoelectric conversion layers stacked above a semiconductor substrate, the plurality of pixel parts being arranged above the semiconductor substrate. The three photoelectric conversion layers, respectively, included in one pixel part are interposed between pixel electrode layers and opposing electrode layers. A region thus interposed is made a pixel region that generates a signal charge for formation of one pixel data. The pixel region includes a convex portion and a concave portion as viewed in plane view, and a part of the convex portion is arranged in a manner to put in a concave portion in a pixel region of an adjacent pixel part.
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