发明名称 |
Memory and method of fabricating the same |
摘要 |
A memory and a method of fabricating the same are provided. The memory is disposed on a substrate in which a plurality of trenches is arranged in parallel. The memory includes a gate structure and a doped region. The gate structure is disposed between the trenches. The doped region is disposed at one side of the gate structure, in the substrate between the trenches and in the sidewalls and bottoms of the trenches. The top surface of the doped region in the substrate between the trenches is lower than the surface of the substrate under the gate structure by a distance, and the distance is greater than 300 Å.
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申请公布号 |
US7663184(B1) |
申请公布日期 |
2010.02.16 |
申请号 |
US20080183358 |
申请日期 |
2008.07.31 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHAN YAO-FU;CHU TA-KANG;TING JUNG-CHUAN;YIH CHENG-MING |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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