发明名称 Thin film transistor array panel and method for manufacturing the same
摘要 The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.
申请公布号 US7662715(B2) 申请公布日期 2010.02.16
申请号 US20070944083 申请日期 2007.11.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO BEOM-SEOK;BAE YANG-HO;LEE JE-HUN;JEONG CHANG-OH
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
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