| 摘要 |
Disclosed is a group III nitride semiconductor epitaxial substrate, specifically an AlGaN epitaxial substrate (0 <= x <= 1), which is improved in crystal quality by suppressing generation of cracks and dislocations. More specifically disclosed is an AlGaN epitaxial substrate (0 < x <= 1), which is useful for a light-emitting device of ultraviolet or deep ultraviolet region. The group III nitride semiconductor epitaxial substrate is composed of a base and an AlGaN (0 <= x <= 1) layer arranged on the base. This group III nitride semiconductor epitaxial substrate is characterized in that a layer, wherein crystals having -C polarity and crystals having +C polarity are mixed, is arranged on the base side of the AlGaN layer.
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