发明名称 SUBSTRATE TREATMENT METHOD
摘要 There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of undercoat material of the substrate. The substrate treatment method includes: a preparation step for preparing a substrate on which a Cu film is to be formed; and a treatment step for performing a predetermined treatment on the substrate so that the crystal on the surface of the undercoat of the substrate exhibits such an orientation that the grating mismatch between the crystal and the Cu film is small.
申请公布号 KR20100017521(A) 申请公布日期 2010.02.16
申请号 KR20097025010 申请日期 2006.03.22
申请人 TOKYO ELECTRON LIMITED 发明人 YOSHII NAOKI;MATSUZAWA KOUMEI;KOJIMA YASUHIKO
分类号 H01L21/205;H01L21/28 主分类号 H01L21/205
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