发明名称 |
PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS |
摘要 |
<p>Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl<SUB>5</SUB>). The invention generates a sharp interface between low-k materials and liner materials.</p> |
申请公布号 |
EP1756856(A4) |
申请公布日期 |
2010.02.17 |
申请号 |
EP20050755089 |
申请日期 |
2005.05.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUNN, DERREN, N.;KIM, HYUNGJUN;ROSSNAGEL, STEPHEN, M.;SEO, SOON-CHEON |
分类号 |
H01L21/283;H01L21/285;H01L21/4763;H01L21/52;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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