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发明名称
Verfahren zum Dotieren von Halbleiterkristallen aus der Gasphase
摘要
申请公布号
DE1644007(A1)
申请公布日期
1970.09.24
申请号
DE19671644007
申请日期
1967.05.18
申请人
SIEMENS AG
发明人
WENZIG,DIPL.-PHYS.WOLFGANG
分类号
C30B31/16;H01L21/00
主分类号
C30B31/16
代理机构
代理人
主权项
地址
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