| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of correcting defects in a multilayer film due to irregularities on a reflective mask for EUV (Extreme Ultra Violet) lithography. <P>SOLUTION: The reflective mask is formed by using a mask blank comprising the substrate 1 and the multilayer film 2 arranged on it. When the reflective mask has defects, a defect part of a defect region comprising the defects of the reflective mask due to the irregularities on the substrate 1 is removed, and it is replaced with a normal part 10 of a flat region, from which the defect region is removed and which does not comprise the defects. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
