发明名称 METHOD FOR MANUFACTURING AlN SUBSTRATE AND AlN SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing an AlN substrate for improving the yield of an AlN substrate with an off-angle on the surface controlled, and to provide an AlN substrate. SOLUTION: The method for manufacturing an AlN substrate 10 includes the following steps. First, an AlN crystal is grown. From the AlN crystal, the AlN substrate 10 containing a surface 11 having a first region 12 and a second region 13 surrounding the first region 12 is cut out. In the cutting step, the AlN substrate 10 is cut out in such a manner that an off angle made by an axis orthogonal to the surface 11 and the C-axis is minimum at a first point 13a of the second region 13. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010030799(A) 申请公布日期 2010.02.12
申请号 JP20080192189 申请日期 2008.07.25
申请人 SUMITOMO ELECTRIC IND LTD 发明人 ARAKAWA SATOSHI;MIYANAGA TOMOMASA;SAKURADA TAKASHI;NAKAHATA HIDEAKI
分类号 C30B29/38;B24B1/00;C30B33/00;H01L21/304 主分类号 C30B29/38
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