发明名称 VAPOR DEPOSITION SOURCE UNIT, VAPOR DEPOSITION METHOD, CONTROLLER FOR VAPOR DEPOSITION SOURCE UNIT AND FILM DEPOSITION SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a vapor deposition source unit which increases the temperature controllability of a material vessel. Ž<P>SOLUTION: The vapor deposition source unit 20 used for film deposition comprises: a material charger 210 having a material vessel 210a; an outer case 220 whose hollow inside is mounted with the material charger 210 so as to be attachable/detachable; an inside heater 210d provided at the material charger 210 and heating the material charger 210; and a carrier passage 210c defined by the mounting of the outer case 220 with the material charger 210 and carrying a film deposition material vaporized by the heating of the inside heater 210d. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010031324(A) 申请公布日期 2010.02.12
申请号 JP20080195302 申请日期 2008.07.29
申请人 TOKYO ELECTRON LTD 发明人 ONO YUJI;IKUTA HIROYUKI;YAGI YASUSHI
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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