发明名称 |
VAPOR DEPOSITION SOURCE UNIT, VAPOR DEPOSITION METHOD, CONTROLLER FOR VAPOR DEPOSITION SOURCE UNIT AND FILM DEPOSITION SYSTEM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor deposition source unit which increases the temperature controllability of a material vessel. Ž<P>SOLUTION: The vapor deposition source unit 20 used for film deposition comprises: a material charger 210 having a material vessel 210a; an outer case 220 whose hollow inside is mounted with the material charger 210 so as to be attachable/detachable; an inside heater 210d provided at the material charger 210 and heating the material charger 210; and a carrier passage 210c defined by the mounting of the outer case 220 with the material charger 210 and carrying a film deposition material vaporized by the heating of the inside heater 210d. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2010031324(A) |
申请公布日期 |
2010.02.12 |
申请号 |
JP20080195302 |
申请日期 |
2008.07.29 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
ONO YUJI;IKUTA HIROYUKI;YAGI YASUSHI |
分类号 |
C23C14/24;H01L51/50;H05B33/10 |
主分类号 |
C23C14/24 |
代理机构 |
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主权项 |
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地址 |
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