| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemo-mechanical polishing having high polishing speed and high polishing selectivity to a copper film, and a small amount of metal contamination of a wafer without causing any defects in the copper film and a low dielectric-constant insulation film even under normal pressure conditions, and to provide a chemo-mechanical polishing method using the aqueous dispersion for chemo-mechanical polishing. <P>SOLUTION: The aqueous dispersion for chemo-mechanical polishing is used for polishing the copper film containing a silica particle (A), an organic acid (B), and an anionic surfactant (C). The silica particle (A) should have the following chemical properties. Silanol group density calculated from a specific surface area measured by a BET method and the amount of silanol groups measured by titration is 1.0-3.0/nm<SP>2</SP>. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
