发明名称 SEMICONDUCTOR MEMORY SYSTEM FOR GENERATING REFRESH FLAG
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory system for generating a refresh flag. Ž<P>SOLUTION: The semiconductor memory system includes a memory controller for controlling generation of an address signal and an external command in response to a predetermined output refresh flag, and a memory module provided with first to N memory devices for generating first to N refresh flags while the address signal and the external command are received and the memory cell is refreshed. The memory module is provided with an output calculation part for outputting, if even one of the first to N flag signals is activated, an activated flag signal as an output flag signal. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010033702(A) 申请公布日期 2010.02.12
申请号 JP20090230630 申请日期 2009.10.02
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI JUNBAI
分类号 G11C11/401;G11C11/406;G06F12/00;G11C7/10 主分类号 G11C11/401
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