| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing leak current. Ž<P>SOLUTION: The semiconductor device is provided with: first and second memory cells each having an element region 20, a tunnel insulation film 30 formed on the element region 20, a charge storing insulation film 40 formed on the tunnel insulation film 30, a block insulation film 60 formed on the electrode storing insulation film 40, and a control gate electrode 70 formed on the block insulation film 60; and element isolation regions 50 each formed between the element regions 20 of the first and second memory cells, the tunnel insulation film 30 and the charge storing insulation film 40. The block insulation film 60 is formed of a first insulation film 61 containing metal element and oxygen as main components and a second insulation film 62 containing silicon and oxygen as main components, and at least one part of the block insulation film 60 is formed on the element isolation region 50. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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