发明名称 METHOD OF MANUFACTURING ORGANIC THIN-FILM TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor capable of manufacturing a TFT using an organic semiconductor on a plastic substrate at a low cost with higher performance. Ž<P>SOLUTION: The method of manufacturing an organic thin-film transistor includes a step of forming an organic thin-film transistor on a first support substrate, and a step in which a second support substrate is laminated on the side opposed to the first support substrate and then the organic thin-film transistor is peeled from the first support substrate. It also comprise a step of forming a first electrode on the first support substrate, a step of forming an organic insulating film to cover the first electrode on the substrate, a step of forming a second electrode on the organic insulating film, a step of forming an organic semiconductor on the organic insulating film, and a step of forming a protective film on the organic semiconductor. The organic semiconductor is positioned on the side opposite to a peeling surface relative to the first electrode. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010034217(A) 申请公布日期 2010.02.12
申请号 JP20080193541 申请日期 2008.07.28
申请人 HITACHI LTD 发明人 KATO MIDORI;HATTORI KOJI;HATANO MUTSUKO;ISHIBASHI MASAYOSHI
分类号 H01L21/336;H01L29/786;H01L51/05 主分类号 H01L21/336
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