| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device such that, when a self-align contact is formed, a contact never comes into contact with parts where silicide is not formed in an extension region and a source drain region. Ž<P>SOLUTION: A semiconductor device includes an L-shaped sidewall 14 formed from the upper part of a sidewall of a gate electrode 13 to the upper part of a semiconductor substrate 11, an interlayer insulating film 22, the extension region 16 covered with the L-shaped sidewall 14, the source drain region 15 partially covered with the L-shaped sidewall 14, a silicide layer 17 formed at a part in the source drain region 15, which is not covered with the L-shaped sidewall 14, and the contact 17 connected to the silicide layer 17. The L-shaped sidewall 14 is formed of an insulating material having a smaller etching rate than the interlayer insulating film 22. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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