| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device having a structure advantageous for miniaturization, cost reduction and temperature control. Ž<P>SOLUTION: The semiconductor laser device includes a Peltier module M1 arranged on a heat sink part 92 of a package 90 and a semiconductor laser element L1 installed on the Peltier module M1. The Peltier module M1 has an insulating heat absorption plate 11, an insulating heat sink 12, an N-type thermoelectric element 13 and a P-type thermoelectric element 14, which are arranged between the heat absorption plate 11 and the heat sink 12 and are bonded to the heat absorption plate 11 and the heat sink 12. The semiconductor laser element L1 is bonded onto the heat absorption plate 11 of the Peltier module M1, and the heat sink 12 of the Peltier module M1 is bonded onto the heat sink part 92. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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