| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce gate/drain overlap capacity of a thin-film transistor having a GOLD structure. Ž<P>SOLUTION: The transistor is provided with a semiconductor layer 12, having a channel region 3, a source region and a drain region 5, which are positioned on both sides of the channel region 3, and at least one lightly-doped region 4, which is sandwiched between the channel region 3 and the source region or the drain region 5 and has a lower concentration than the source region and the drain region 5; a gate insulating film 7, which is formed on the semiconductor layer 12 and is brought into contact with the channel region 3; a gate electrode 8 arranged on the gate insulating film 7 so that it is overlapped; with at least one lightly-doped region 4 and the channel region 3; and the other insulating film 6 formed between the gate insulating film 7 and the semiconductor layer 12 so that it covers at least one lightly-doped region 4. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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