| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent concentration of electric field to an inter-electrode insulating film, and to improve workability for forming a short-circuit opening part. Ž<P>SOLUTION: A tunnel insulating film 4, a polycrystalline silicon film 5, an inter-electrode insulating film 6 and a lower layer 7a of a polycrystalline silicon film 7 are formed in a silicon substrate 1. The short-circuit opening part 6a is formed in the inter-electrode insulating film 6 in a flat state. An intermediate layer 7b of the polycrystalline silicon film 7 and a work insulating film are laminated and formed. An element isolation groove 1d is formed in the silicon substrate 1; the groove is filled with the element separation insulating film 2 to a prescribed height so as to planarize it. An upper layer 7c of the polycrystalline silicon film 7, a silicide film 8 and a silicon nitride film 9 are laminated and formed. Thus, workability of the inter-electrode insulating film 6 is improved, and concentration of the electric field can be prevented. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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