| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor which is requested to have a high breakdown voltage, and a method of manufacturing the same. SOLUTION: The invention relates to an offset MOS transistor using a LOCOS oxide film, wherein an end portion of a drain diffusion layer is covered with an offset diffusion layer by etching the LOCS oxide film at a periphery of the drain diffusion layer requested to have a high breakdown voltage and forming the drain diffusion layer in a surface region of a semiconductor substrate below a region where the LOCS oxide film is made thin, so that electric field concentration caused in a region below the drain diffusion layer is reduced, and the MOS transistor operates safely even with a voltage above 50V. COPYRIGHT: (C)2010,JPO&INPIT
|
